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HGTG12N60D1D
April 1995
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE
Features
* 12A, 600V * Latch Free Operation * Typical Fall Time <500ns * Low Conduction Loss * With Anti-Parallel Diode * tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY PART NUMBER HGTG12N60D1D PACKAGE TO-220AB BRAND G12N60D1D
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
NOTE: When ordering, use the entire part number
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTG12N60D1D 600 600 21 12 48 20 30A at 0.8 BVCES 21 12 75 0.6 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (0.125 inches from case for 5s) NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
File Number
2800.4
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Specifications HGTG12N60D1D
Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Voltage SYMBOL BVCES ICES TEST CONDITIONS IC = 280A, VGE = 0V VCE = BVCES VCE = 0.8 BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC90, VGE = 15V TC = TC = TC = TC = Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Gate-Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES VGEP QG(ON) +25oC +125oC +25oC +125oC MIN 600 3.0 IEC = 12A IEC = 12A, dIEC/dt = 100A/s TYP 1.9 2.1 4.5 7.2 45 70 100 150 430 430 1.8 MAX 280 5.0 2.5 2.7 6.0 500 60 90 600 600 1.67 1.5 1.50 60 UNITS V A mA V V V nA V nC nC ns ns ns ns mJ
oC/W oC/W
IC = 250A, VCE = VGE, TC = +25oC VGE = 20V IC = IC90, VCE = 0.5 BVCES IC = IC90, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Current Fall Time Turn-Off Energy (Note 1) Thermal Resistance IGBT Thermal Resistance Diode Diode Forward Voltage Diode Reverse Recovery Time NOTE:
tD(ON)I tRI tD(OFF)I tFI WOFF RJC RJC VEC tRR
L = 500H, IC = IC90, RG = 25V, VGE = 15V, TJ = +150oC, VCE = 0.8 BVCES
V ns
1. Turn-off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG12N60D1D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-off Switching Loss. This test method produces the true total Turn-off Energy Loss.
Typical Performance Curves
20 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE DURATION = 250s DUTY CYCLE < 0.5% VCE = 10V 20 PULSE DURATION = 250s DUTY CYCLE < 0.5% TC = +25oC 15 VGE = 15V 10 VGE = 7.0V VGE = 10V VGE = 7.5V
16
12
8 TC = +150oC 4 TC = +25oC TC = -40oC 0 0 2 4 6 8 10 VGE, GATE-EMITTER VOLTAGE (V)
VGE = 6.5V 5 VGE = 5.7V VGE = 6.0V
0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
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HGTG12N60D1D Typical Performance Curves (Continued)
25 VGE = 15V ICE , COLLECTOR CURRENT (A) 20 tFI, FALL TIME (ns) 1000 1200 VCE = 480V, VGE = 10V AND 15V TJ = +150oC, RGE = 25, L = 500H
800
15
600
10
400
5
200
0 +25
0 +50 +75 +100 +125 +150 1 10 PEAK COLLECTOR-EMITTER CURRENT (A) 20 TC , CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
f = 1MHz 2500 C, CAPACITANCE (pF)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
3000
600 VCC = BVCES 450 VCC = BVCES
10 VGE, GATE-EMITTER VOLTAGE (V)
7.5
2000
1500
CISS
300
0.75 BVCES 0.75 BVCES 0.50 BVCES 0.50 BVCES 0.25 BVCES 0.25 BVCES
5.0
1000 COSS CRSS 0 0 5 10 15 20 25
150 RL = 60 IG(REF) = 0.868mA VGE = 10V 0 20
2.5
500
0 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260)
4 VCE(ON), SATURATION VOLTAGE (V)
3 VGE = 10V 2 VGE = 15V 1
WOFF , TURN-OFF SWITCHING LOSS (mJ)
TJ = +150oC
5.0
TJ = +150oC, VGE = 10V RGE = 25, L = 500H
1.0 VCE = 480V
VCE = 240V 0.1
0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 20
1
10 ICE, COLLECTOR-EMITTER CURRENT (A)
20
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
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HGTG12N60D1D Typical Performance Curves (Continued)
1000 TJ = +150oC RGE = 25 L = 500H 100 fOP , OPERATING FREQUENCY (kHz) TJ = +150oC, TC = +100oC RG = 25, L = 500H
tD(OFF)I , TURN-OFF DELAY (ns)
VCE = 240V, VGE = 10V VCE = 240V, VGE = 15V VCE = 480V, VGE = 10V VCE = 480V, VGE = 15V
10
fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF PC = DUTY FACTOR = 50% RJC = 1.67oC/W VCE = 480V, VGE = 10V AND 15V VCE = 480V, VGE = 10V AND 15V
100 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 20
1 1 10 30 ICE, COLLECTOR-EMITTER CURRENT (A) NOTE: PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER CURRENT
100 IEC , EMITTER-COLLECTOR CURRENT (A)
FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE
80 70 t, RECOVERY TIMES (ns)
10
TJ = +150oC TJ = +100oC
60 50 40 30 20 10
tRR
1.0
tA
0.1 TJ = +25oC
tB
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VEC , EMITTER-COLLECTOR VOLTAGE (V)
0 1 10 IEC , EMITTER-COLLECTOR CURRENT (A) 100
FIGURE 11. TYPICAL DIODE EMITTER-TO-COLLECTOR VOLTAGE
FIGURE 12. TYPICAL tRR, tA, tB vs FORWARD CURRENT
Operating Frequency Information
Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/WOFF . The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) so that the conduction losses (PC) can be approximated by PC = (VCE x ICE)/2. WOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE - 0A). The switching power loss (Figure 10) is defined as fMAX1 x WOFF . Turn on switching losses are not included because they can be greatly influenced by external circuit conditions and components.
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HGTG12N60D1D
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
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